Variability Study of Silicon Nanowire FETs
نویسندگان
چکیده
Yi-Bo Liao, Meng-Hsueh Chiang, Keunwoo Kim, and Wei-Chou Hsu Institute of Microelectronics, Department of Electrical Engineering, National Cheng Kung University, Tainan 701, Taiwan Department of Electronic Engineering, National Ilan University, I-Lan 260, Taiwan IBM T. J. Watson Research Center, Yorktown Heights, NY 10598, USA E-mail: [email protected], Tel: +886-3-9357400 ext. 653, Fax: +886-3-936-9507
منابع مشابه
A CMOS-Compatible Poly-Si Nanowire Device with Hybrid Sensor/Memory Characteristics for System-on-Chip Applications
This paper reports a versatile nano-sensor technology using "top-down" poly-silicon nanowire field-effect transistors (FETs) in the conventional Complementary Metal-Oxide Semiconductor (CMOS)-compatible semiconductor process. The nanowire manufacturing technique reduced nanowire width scaling to 50 nm without use of extra lithography equipment, and exhibited superior device uniformity. These n ...
متن کاملStudy the Effect of Silicon Nanowire Length on Characteristics of Silicon Nanowire Based Solar Cells by Using Impedance Spectroscopy
Silicon nanowire (SiNW) arrays were produced by electroless method on polycrystalline Si substrate, in HF/ AgNO3 solution. Although the monocrystalline silicon wafer is commonly utilized as a perfect substrate, polycrystalline silicon as a low cost substrate was used in this work for photovoltaic applications. In order to study the influence of etching time (which affects the SiNWs length) on d...
متن کاملIonic effect on the transport characteristics of nanowire-based FETs in liquid environment
For the development of ultra-sensitive electrical bio/chemical sensors based on nanowire field-effect-transistors (FET), the influence of the ions in the solution on the electron transport has to be understood. For this purpose we establish a simulation platform for nanowire FETs in the liquid environment by implementing the modified Poisson-Boltzmann model into Landauer transport theory. We in...
متن کاملAnalytical Model for the Threshold Voltage Variability due to Random Dopant Fluctuations in Junctionless FETs
An analytical model of the threshold voltage variance induced by random dopant fluctuations (RDF) in junctionless (JL) FETs is derived for both cylindrical nanowire (NW) and planar double-gate (DG) structures considering only the device electrostatics in subthreshold. The model results are shown to be in reasonable agreement with TCAD simulations for different gate lengths and device parameters...
متن کاملInterface Trap Analysis using Charge Pump Profiling Techniques in Gate-All- Around Silicon Nanowire Field Effect Transistor
This paper present the electron charge pumping technique using the various charge pumps circuits for interface trap density and edge leakage reduction that is major concern in GAA short channel nanowire structure. Latched and bootstrap charge pump circuit has been simulated and analyzed for GAA structure. The charge pumping technique requires body contact of FET which has been implemented for G...
متن کاملSilicon Nanowires and Silicon/molecular Interfaces for Nanoscale Electronics
of the thesis The thesis describes the realization of high-performance silicon nanowire (Si NW) logic circuits and a novel surface modification technique for nanoscale electronics applications. First, doped Si NWs were generated via the superlattice nanowire pattern transfer (SNAP) process, forming aligned, uniform, ultra-dense NW arrays. The NWs served as the channel material for field-effect ...
متن کامل